Defects in silicon nanowires
نویسنده
چکیده
Defects in silicon nanowires have been investigated using the electron spin resonance ESR method. The ESR signals consist of three features: a strong resonance at g=2.002 49, a weak line at g=2.000 48, and a broad feature at g=2.005 41. From the saturation behavior and oxidation-related and temperature dependence analysis, we ascribe that the strong resonance corresponds to the EX center and the weak line to the well-assigned E center. We argue that the assignment of the broad feature to Pb centers A. Baumer et al., Appl. Phys. Lett. 85, 943 2004 is oversimplified, and its physical origins may include dangling bonds in amorphous silicon. © 2006 American Institute of Physics. DOI: 10.1063/1.2191830
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